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A physics-informed uncertainty-aware surrogate for $p$-$n$ junction diodes
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First announced by arXiv: 2026-10-30 · Indexed by Pub-AI: 2026-10-30 UTC
A physics-informed uncertainty-aware surrogate for $p$-$n$ junction diodes
First announced by arXiv: 2026-10-30 · Original record ↗
- arxiv
- 2610.39993
Explicit source versions (1)
- v1 · Date not supplied
- Preprint available
Source date: 2026-10-30 · First detected: 2026-10-30 UTC · Historical baseline
Source evidence (1)
- Official evidence ↗ · RSS guid=oai:arXiv.org:2610.39993v1; arxiv:announce_type=new; item pubDate (official metadata)
Abstract · arxiv
We develop an uncertainty-aware physics-informed surrogate for a one-dimensional $p$-$n$ junction diode, conditioned on device length, doping and bias. Using the internal state of the device as predicted by the surrogate we develop a test-suite of quantities of interest including the terminal current, depletion width, peak field and stored charge. The formalism and the quantities are can be extended to asymmetric junction and two-dimensional diodes as shown by means of benchmark analysis. For the one-dimensional symmetric junction surrogate, we obtain 0.11% median $L_1$ error on the electrostatic potential, and 1.5% and 0.61% on the electron and hole densities. Finally, we develop an uncertainty analysis which determines the validity of surrogate answer within the user-specified tolerance.